| 摘要 |
PURPOSE:To obtain the desired spectral sensitivity characteristics for the titled photo-receiving element by a method wherein a P-region is provided at the effective photo-receiving part located on the upper surface of an N type substrate, and said substrate is removed at the part directly below the P-region by performing a selective etching to the prescribed thickness. CONSTITUTION:Thin P-layers 19B, 19G and 19R are provided on N type Si substrates 18B, 18G and 18R respectively, and reflection is prevented by covering the above with SiO2 films 20B, 20G and 20R. Said films 20B, 20G and 20R have the thickness of 830Angstrom , 930Angstrom and 1,000Angstrom respectively, and they have the maximum transmittance with the wavelength of incident ray of 480nm, 540nm and 600nm respectively. An inflared ray shielding filter 21 is superposed on a reflection preventing film. The lower surface of the substrates 18B, 18G and 18R is removed by performing a selective etching, and the thickness of diaphragms 22B, 22G and 22R is brought to 20mum, 40mum and 90mum respectively. According to the constitution, diodes have the spectral sensitivity having the peak at the wavelengths of 480nm, 560nm and 700nm or thereabout, and color can be discriminated when an arithmetic operation is performed on the photoelectric current of each diode. As the effective thickness of the light-receiving part of each diode can be made small, the effect of a long wavelength light can be reduced, and the sensitivity on the side of short wavelength can also be improved by forming a shallow P-layer 19. |
