| 摘要 |
PURPOSE:To flatten an electrode wiring surface while obtaining an electrode wiring, which is not disconnected, by attaching silicon nitride and titanium on a semiconductor substrate and reacting both substances through heating when a wiring or an electrode is formed by using a titanium nitride material. CONSTITUTION:The semiconductor substrate 1 is coated with a SiO2 film 2, an opening section 3 for forming the electrode is bored to a predetermined section, and a Si3N4 film 41 in approximately 2,000Angstrom thickness is formed on the whole surface containing a diffusion region exposed through a decompression plasma method. The film 41 is coated with a Ti film of the same thickness through an evaporation method, and a desired Ti pattern 42 is obtained through plasma etching. Consequently, the Si3N4 film of an excellent step coverage is obtained even when there is a stepped difference in the opening section for forming the electrode wiring. Accordingly, a thin electrode wiring layer of a flat surface can be formed, and the method contributes largely to the microminiaturizing of the element. |
