| 摘要 |
PURPOSE:To eliminate the need for an exclusive large-sized gate valve by connecting a reaction chamber and a spare chamber in an airtight manner by using a substrate-holder push plate and shifting the semiconductor substrate inserted into the spare chamber into the reaction chamber through the separation and contact of the push plate. CONSTITUTION:The vertical type reaction chamber 1 and the spare chamber 2 positioned at the lower end of the chamber 1 are conneted, the substrate-holder push plate 10 is installed to the connecting section, the push plate is pushed by a sliding shaft 11 through an airtight bearing 12, and the reaction chamber 1 and the spare chamber 2 are interrupted completely. The inside of the reaction chamber 1 is brought to a predetermined decompression state, the cover 2-1 of the spare chamber 2 is opened, and the semiconductor substrate 16 is inserted from the cover, and adsorbed to a chuck 14 on a rotary arm 15. The inside of the spare chamber 2 is brought similarly to the decompression state, the arm 15 is turned vertically to shift the substrate 16 to the push plate 10, and the substrate is fixed by springs 8. The shaft 11 is retreated to communicate the reaction chamber 1 and the spare chamber 2, the springs 8 are released, and the substrates 16 are fixed radially around a rotary substrate holder 7 set up in the reaction chamber 1 by using the same springs 8. |
