| 摘要 |
<p>In accordance with the present invention, there is provided a semiconductor rectifier diode which has low loss, quick response and soft reverse recovery properties and is composed of three consecutive layers, i. e., a p-type emitter layer (3), an n-type base layer (4) and an n-type emitter layer (5), the p-type emitter layer being composed of a first portion (31) and second portions (32) which surround said first portion, have a higher impurity concentration as compared with said first portion, and extend beyond said first portion toward said n-type base layer, and said base layer being composed of a first layer portion (41) which is adjacent to said n-type emitter layer and a second layer portion (42) which is located near a p-n junction (J1) side and has a lower impurity concentration as compared with said first layer portion.</p> |
