| 摘要 |
PURPOSE:To obtain a fast responsing light-emitting element by a method wherein a contact potential electrode is provided on the circumference of a current injection electrode, and the minority carrier storage effect on the circumference of a light-emitting region is suppressed. CONSTITUTION:A Zn-added In0.74Ga0.26As0.56P0.44 active layer 2, a Zn-added InP layer 3 and an Sn-added In0.89Ga0.11As0.24P0.76 layer 4 are superposed on the surface (100) of an Sn-added InP substrate 1. A circular Zn diffusion layer 4a and a concentric ring-shaped Zn diffusion layer 4b are provided in the layer 4, Au-Zn alloy electrode 5 and 6 are attached, and a ring-shaped Au-Ge-Ni alloy electrode 7 is attached to the substrate 1. When the electrode 7 is grounded and a modulation signal voltage is applied to the electrode 5, the electrode 6 is also grounded. According to this constitution, minority carrier is not accumulated on the P-N junction located outside the region 4b, the minority carrier to be accumulated due to the drop of junction voltage is markedly reduced even at the P-N junction located in the vicinity of the light-emitting region outside the region 4a, and there is no deterioration in responsing speed. Also the current between the electrodes 5 and 6 is very small and almost no lowering in optical output is observed. |
