| 摘要 |
<p>PURPOSE:To improve response characteristics and to reduce defects such as a short- circuit of electrode, by reducing the intervals between insulating substrates which face each other at a picture element electrode part. CONSTITUTION:The insulating substrate 1 is formed in an projection shape 21 such as an island or knot shape where picture element electrodes 4 are formed. For this purpose, the insulating substrate 1 is worked by normal photolithography so that the height H of the park of a projection mode 21 as picture element electrodes 4 is greater than the height (h) of a thin film transistor 3. Thus, the trouble originating from the projection shape of a field effect transistor structure part is solved to improve the response characteristics and also reduce defects such as an electrode short-circuit</p> |
