| 摘要 |
PURPOSE:To obtain an etching pattern of high accuracy by activating a wafer, to which a pattern of a resist is formed, in an etching reaction chamber first, previously forming a polymerized film having plasma-resisting property on a resist film and etching the surface by plasma. CONSTITUTION:The Si wafer 1 is coated with an Al film 2, the resist films 3 of predetermined shapes are formed onto the film 2, the wafer 1 is entered into an etching reaction chamber and the chamber is evacuated, and a gas for forming the polymerized film having plasma-resisting property, such as styrene, CCl4, etc. is enclosed. Plasma is generated in the reaction chamber by using high-frequency voltage higher than applied voltage employed for normal plasma etching, and the surface of a sample is made easy to be activated and the polymerized films 4 are formed only on the films 3. The films 2 of desired shapes are left only under composite films of the films 4 and 3 and others are removed by using a normal etching gas, such as CCl2, BCl3, etc. while employing these composite films as masks. |
