Zig-zag V-MOS transistor structure

摘要

A zig-zag V-groove configuration for use in V-MOS transistors is disclosed. Instead of merely forming parallel rows of V-grooves, a zig-zag configuration is used, utilizing two different directions for the V-grooves, at least one of which is not the conventional <011> direction. This configuration can be used with either the ladder or interdigitated configuration for the source contact and gate metals.