| 摘要 |
PURPOSE:To enable to improve light emitting output and prevent the deterioration of conduction by increasing the thickness of elements by a method wherein a p type GaAs layer is laminated further on the p type layer 5 in the lamination body consisting of an n type and p type GaAlAs layers which contain Si as an impurity. CONSTITUTION:The n type GaAlAs layer 4 and a p type GaAlAs layer 5 are successively grown on an n type GaAs substrate by slow cooling system liquid epitaxial growing method using a GaAlAs epitaxial growing solution which contains Si, resulting in the formation of p-n junctions. Next, the epitaxial growing solution is removed, a GaAs epitaxial growing solution which contains Zn or Ge as an impurity is increased in temperature up to the temperature not exceeding the temperature at the time of forming the p-n junctions, the p type GaAs layer 6 which cobtains Zn or Ge as an impurity is grown on the p type GaAlAs layer 5 by slow cooling system liquid epitaxial growing method, and next the n type GaAs substrate 1 is removed. |
