MIS TYPE SEMICONDUCTOR ELEMENT

摘要

PURPOSE:To enable to restrain short channel effect without increasing source- drain resistance by using a source and a drain which make ohmic contact with the channel and Schottky contact with a substrate. CONSTITUTION:Since the aluminum source and drain 13 make Schottky contact with the N type Si substrate 10 and ohmic contact with the formed P type channel 15, the defect of small drain current which is found in conventional Schottky source-drain MOS type semiconductor elements is not recognized, and accordingly characteristics of a MOS type semiconductor element wherein a diffused layer is used for the source and drain are obtained. The source-drain resistance can be reduced by using aluminum for the source and drain, and the Schottky channel effect is difficult to generate.