| 摘要 |
PURPOSE:To reduce the step cuts of wirings and thus enhance the reliability by providing an oxide film which is formed on a nitride film and divides a polycrystalline Si region by contacting this region, and metallic electrodes formed by contacting the surface of the polycrystalline Si. CONSTITUTION:Diffused layers 16 and 17 of the source and drain are formed, an Si nitride film 18 is grown, and apertures are formed at contact parts. The polycrystalline Si layer 19 doped with phosphorus is grownm a nitride film is grown thereon, and next nitride films 20 and 20' are left above the apertures by photoetching method. Then, oxide films 21, 21', and 21'' are formed by oxidizing the polycrystalline Si with those films as the mask. Then, polycrystalline Si regions 22 and 22' are formed under the part of remnant nitride films. When aluminum electrodes 23 and 23' are formed on the exposed polycrystalline Si, step cuts do not generate, because the stepwise difference at the contact part is the step wise difference via a smooth oxide film generated by the oxidation of the polycrystalline Si with a thermo-oxidation resistant mask. |
