| 摘要 |
PURPOSE:To contrive to improve gate protection effect by simplify manufacturing processes by connecting a p<+>-n-p<+> junction diode as the protection element for a p-channel MOSFET. CONSTITUTION:The photoetching to expose channel parts is performed, and then n-type regions 5 serving as the channel parts are formed in self-alignment by phosphorus ion implantation and diffusion. Boron impurity is deposited or diffused at high concentration with LTP films 6 left by removing a part by photoetching as the mask. Thereby, p<+> type regions 7 serving as sources are formed at a part of the channel parts, the part 8 of the exposure of a polycrystalline Si layer is changed into p<+> type one; accordingly the p<+>-n-p<+> junction is obtained between the masked n type part. After a PSG is formed as a layer insulation film 9, and contact photoetching is performed, aluminum is adhered, and then the source electrode 10 connected to the p<+> type polycrystalline Si layer on one side of the p<+>-n-p<+> junction and the gate electrode 11 connected to the polycrystalline Si layer 8 on the other side are formed. |
