| 摘要 |
PURPOSE:To eliminate the generation of the oxidation, exfoliation, etc. of electrodes at all and thus securely restrain the deterioration of electric characteristics with time by a method wherein an inorganic insulation film is provided on a substrate having flexibility and heat resistance whereon an amorphous Si film and electrodes are formed. CONSTITUTION:The surface of the stainless substrate 1 of the plate thickness of approx. 100mum is polished to the degree of surface roughness of approx. 0.1mum or less, and a polymer resin thin film 2 is formed to the thickness of approx. 2mum. The inorganic insulation film 3 of the film thickness of approx. 2,000Angstrom is formed by sputtering alumina on the stainless substrate 1 whereon the thin film 2 has been formed. The lower electrodes 4a-4e are respectively formed at fixed intervals by sputtering stainless on this insulation film 3. Next, the amorphous Si film 5 is formed in the order of P-I-N or N-I-P at the temperature of the substrate 1 at approx. 250 deg.C by plasma CVD method, photo transmitting upper electrodes 6a-6c are respectively adhesion-formed, and an SiO2 film 7 is adhesion- formed, resulting in the completion of an amorphous Si solar batteries connected in series by five pieces. |
