| 摘要 |
PURPOSE:To obtain a vertical type transistor which stably operates even in the case of use at a relatively higher collector voltage by a method wherein a P type region is newly provided between an emitter region and a base electrode, and the insulation thin film on a partial surface is completely covered with a metal at the same potential as the emitter region. CONSTITUTION:The P type region 12 is additionally provided between the base electrode 7 and the emitter electrode 6. Connected to a collector region part 51 adjacent in the main surface opposed to the semiconductor substrate of an epitaxial layer 4, the electrode of the emitter region 6 forms a lead out electrode 13 and then covers an insulation film 8 over all the surfaces of the regions surrounded by the P type region 12 and the collector region 51 and further divided from a section 41 in the epitaxial layer. The leakage current between the collector region 51 and the emitter does not generate except the case due to the fault in manufacture even when a high collector voltage is impressed, and then receives no influence of mobile ions from the outside or of electromagnetic field from others. |
