| 摘要 |
PURPOSE:To enable ion plating and ion implantation in a large area at a low speed, by separating ions for implantation and at the same time, implanting the ions into a substrate at a uniform and large current density by making use of the sheet plasma in a magnetic field. CONSTITUTION:Ions for implantation are separated by making use of sheet plasma 10 (thickness direction) having the thickness as thin as about the diameter of the cyclotron of ions and having a large width and at the same time, the ions are implanted into an implanting substrate 9 having a large area at a uniform and large current density. An inert gas of small mass such as helium is used as gas for electric discharge, and the radius of cyclotron is decreased in a magnetic field B0 to prevent the arrival thereof at the substrate 9. Only the ions of the large mass for implantation are permitted to arrive at the substrate 9. The ion plating and ion implantation of a large area at a low speed are made possible by the above-mentioned device. |
