| 摘要 |
PURPOSE:To prevent any generation of defective goods which might be caused by mistakingly selecting the kind of ion by providing a means of measuring emissions developing between a mass spectrograph and an ion implantation chamber. CONSTITUTION:After an ion beam 2 led out from an ion source 1 is divided according to the radio between mass and the charge by means of the magnetic field of a magnetic-field mass spectrograph 3, only those beams which pass through a mass-separating slit 4 among the divided beams enter into an implantation chamber 5 before being irradiated upon a wafer 6 installed in the implantation chamber 5. Such a device is provided with a means of measuring emissions developing between the mass spectrograph 3 and the implantation chamber 5, such as a viewing port 7 which transmits light discharged from the ion beam and a spectrometer 8. As a result, in performing implantation of P<+> ion for example, any possibility of mistakingly selecting a different beam can be prevented by affirming the kind of ion by setting the spectrometer 8 to a line peculiar to P<+> ion. |
