发明名称 ETCHING METHOD
摘要 PURPOSE:To reduce damage to a substrate by electron beams, X-rays and ion beams, and to detect a positioning mark by applying a resin layer, a glass layer and an electron-beam resist in succession starting at an lower-most layer and conducting transfer and removal by specific operation. CONSTITUTION:A resin layer 8 containing a heavy element as a lowermost layer, a coatable glass film 9 in approximately 0.1mum thickness as an intermediate film and an electron-beam resist 10 as an uppermost layer are applied, a pattern formed by electron beams is transferred to lower layers in succession through dry etching, and an unnecessary section in a substance to be processed 2 is removed. The passage of incident electron beams 12 to a pattern forming region is prevented by the resin layer 8 containing the heavy element as the lowermost layer, thus reducing damage to a substrate 1. Since a projecting structure mark 11 is used as a positioning mark, the thickness of the resin layer 2 containing the heavy element is thinned extremely in the mark section, thus sufficiently detecting a signal from stepped structure by electron beams 13 for detecting the mark.
申请公布号 JPS62140425(A) 申请公布日期 1987.06.24
申请号 JP19850280935 申请日期 1985.12.16
申请人 HITACHI LTD 发明人 MURAI FUMIO;OKAZAKI SHINJI;SHIRAISHI HIROSHI;SUGA OSAMU
分类号 H01L21/027;H01L21/30;H01L21/302;H01L21/3065 主分类号 H01L21/027
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