| 摘要 |
PURPOSE:To pull up single crystal without requiring damage of parts during taking out the single crsytal, by pulling up the single crystal while pulling up an inner chamber of the completely closed type set in an outer chamber together with a pulling shaft. CONSTITUTION:A raw material for compound semiconductor and B2O3 are fed to the quartz crucible 17, the seed crystal 7 is attached to the tip of the pulling shaft 6, B2O3 in the container 19 of the ring channel type is heated dissolved by the bottom heater 21, sealed, the raw material and B2O3 in the crucible 17 are heated by the top heater 23 and dissolved. The surface of the raw mateial melt 3 is covered with the B2O3 melt 4, the raw material melt is sealed doubly with the B2O3 melt 4 and 20, so that single crystal can be pulled up at low pressure. The seed crystal 7 is lowered, brought into contact with the surface of the raw material melt 3, and the single crystal 8 is pulled up with rotating the pulling shaft 6. The crucible 15 is also rotated. The chamber 18 is pulled up with the pulling shaft 6, the sealing is not broken since the B2O3 melt 20 in the channel type container 19 has sufficient height. After the pulling of the single crystal is over, it is cooled, and the single crystal 8 can be taken out easily without damaging chamber 18. |
