Multiconductor layer structure for monolithic semiconductor integrated circuits

摘要

In a monolithic bipolar silicon semiconductor integrated circuit having an insulated p-n junction, devices which can be operated at high voltage are made possible by using a structure comprising two conductor layers. The first layer comprises polycrystalline silicon which is doped to obtain a suitable conductivity and coated with an insulator. The second layer comprises the standard aluminium metallisation. The first layer is arranged so as to cover the critical pn junction which carries high voltage and it is connected to the more heavily doped side of the junction by an ohmic lead. The first metal layer extends over the planar oxide layer so as to cover the junction and the depletion zone or barrier layer. The latter is covered by the first conductor layer, in particular at the point where the second layer extends across the junction, thereby screening the depletion zone or barrier layer from the second layer so that the diode breakdown voltage cannot be affected adversely by the potentials on the second metal layer.