| 摘要 |
<p>A semiconductor image pickup device of a static induction phototransistor type comprises a control gate region (20) in a first gate region for control, and a shielding gate region (21) in a second gate region. A distance W1 between an n+-type source region (3) and a control gate region (2), and a distance W2 between the n+-type source region (3) and a the shielding gate region (21) have the relationship W1>W2. A shielding mask (22) may be provided over the shielding gate region (21). Thus the separation between adjacent photocells can be improved, thereby markedly improving their integration. </p> |
