| 摘要 |
<p>An intermediate, lattice accommodating epitaxial layer (4) of GaAlAs is positioned between a monocrystalline substrate (2), eg of Al2O3, and a device layer (6) of semiconductor material (eg of GaAs) in which semiconductor devices can be formed. A thin layer (5) of Ge may be included between the substrate (2) and the GaAlAs layer (4) to permit a wider lattice spacing tolerance for the substrate (2).</p> |
