| 摘要 |
PURPOSE:To enable to obtain a high intense laser oscillation with favorable efficiency for a long period by a method wherein the sides of a stripe type laminate on a semiconductor substrate are formed as to construct uneven faces repeating the recess and the protrusion with the prearranged period in the extended direction thereof. CONSTITUTION:The stripe type laminate 2 constructed by laminating an active layer 3 and a clad layer 4 is formed on the semiconductor substrate 1. Moreover burying layers 7 are formed on the substrate 1 adjoining to the sides of the laminate 2. At construction like this, the sides of the laminate 2 are formed of the uneven faces 21 repeating the recess and the protrusion with the prearranged period (lambda) in the extended direction of the laminate 2 thereof. According to this construction, because the uneven faces 21 are formed on the sides of the laminate, transformed formation of the uneven faces 21 thereof is not generated. Accordingly, at the case of the semiconductor laser thereof, the expected characteristic is exhibited extending over the long period, and the high intense laser oscillation can be obtained with favorable efficiency. |
