| 摘要 |
PURPOSE:To process a polysilicon film into a single crystal, and to obtain a single crystal zone having large area, by filling an opening with a silicon single crystal film, piling simultaneously the polysilicon film on an insulating film and a single crystal film on the single crystal film by a vapor growth method, depositing the single crystal silicon film. CONSTITUTION:The SiO2 film ( insulating film) 2 having an opening is formed on the substrate 1 of silicon single crystal, the opening is filled with the silicon single film 3 by selective epitaxial growth, the polysilicon film 4 is piled on the insulating film 2 and the single crystal silicon film 5 is deposited on the silicon single crystal film 3 simultaneously by a vapor method, the single crystal silicon film is piled at least on the silicon single crystal film 5 and the polysilicon film 4 around it by the vapor growth method, and the polysilicon film 4 under the single crystal silicon film in the pile s processed into single crystal. Silicon on an insulator is obtained by a process only by the enlargement of single crystal zone in the width direction even for a thick insulating film 2. |
