| 摘要 |
PURPOSE:To suppress the charging current of a digit line and its peak value, and to obtain a memory circuit whose operating current is small without extending a charging time, by selecting a slave word line through a word line selecting circuit according to an address signal. CONSTITUTION:Slave word lines WLP311, WLP312... and WLP321, WLP322... are selected selectively by slave word selecting circuits B311, B312... and B321, B322... controlled by address signals AD3 and AD3'. Then, selective connections between main word lines WLM31, WLM32... and word lines WLP311, WLP312..., or WLP321, WLP322... are controlled to charge corresponding digit lines DG311, DG312... or DG321, DG322... by a digit line charging circuit P31 or P32. This constitution which charges only necessary digit lines suppresses the charging currents of the digit lines and their peak values without extending the charging time and provides the semiconductor storage circuit whose operation current is small. |
