| 发明名称 |
Process for forming complementary integrated circuit devices |
| 摘要 |
A process for forming chanstops in complementary transistor integrated circuit devices which involves only a single extra masking step yet permits close control of the doping in the chanstops. The process is advantageously used starting with a twin-tub structure for forming CMOS integrated circuit devices.
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| 申请公布号 |
US4435895(A) |
申请公布日期 |
1984.03.13 |
| 申请号 |
US19820365396 |
申请日期 |
1982.04.05 |
| 申请人 |
BELL TELEPHONE LABORATORIES, INCORPORATED |
发明人 |
PARRILLO, LOUIS C.;REUTLINGER, GEORGE W.;WANG, LI-KONG |
| 分类号 |
H01L29/78;H01L21/265;H01L21/266;H01L21/8238;H01L27/08;H01L27/092;H01L29/06;(IPC1-7):H01L21/22 |
主分类号 |
H01L29/78 |
| 代理机构 |
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