| 摘要 |
PURPOSE:To reduce the area of diodes by a method wherein the thickness of one electrode region of a diode constituted in the same semiconductor layer as the collector layer of the main transistor is made thinner than the thickness of the collector layer of the transistor. CONSTITUTION:An n<-> type collector layer 2 of low concentration is formed on an n<+> type collector layer 1. The p type base region 3 and the n type emitter region 4 and the p type anode region 5 of the diode are formed in the layer 2. A surface protection film 6 is formed on the surface, and the electrodes 7, 8 and 9 of each region are formed. Here, the region 5 is diffusion-formed deeper than the region 3. Therefore, the thickness of the n<-> cathode layer 2 immediately under the p type anode region 5 of the diode becomes thinner than the thickness of the collector layer 2 immediately under the p type base region 3 of the main transistor. |
