发明名称 |
Semiconductor device usable at very high frequencies and its production process |
摘要 |
The impedance value of the semiconductor device usable at very high frequencies is preset during manufacture. The device comprises a Gunn or Zener diode coupled to a coaxial line. The central conductor of the line is constituted by a metal wire mandrel or a metal coating deposited on a glass fibre section. The outer cylinderical conductor is a cylindrical metal coating deposited on a ring of dielectric material, such as glass and which surrounds the diode. Application to microstrip, transmitting antenna and radial cavity circuits.
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申请公布号 |
US4437077(A) |
申请公布日期 |
1984.03.13 |
申请号 |
US19810288690 |
申请日期 |
1981.07.31 |
申请人 |
THOMSON-CSF |
发明人 |
HENRY, RAYMOND;HEITZMANN, MICHEL |
分类号 |
H01L47/02;H01L23/12;H01L23/66;H01L29/864;(IPC1-7):H01P1/00 |
主分类号 |
H01L47/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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