| 摘要 |
PURPOSE:To omit the outer mount of a drain protection diode by a method wherein the protection diode is formed in the neighborhood except the operating region of a transistor, and both ends thereof are connected to the source and drain electrodes of the transistor. CONSTITUTION:The drain protection diode 15 is provided except the operating region of the MOS-FET 10 on the same semiconductor substrate 16 as the MOS- FET 10, and formed in the neighborhood of the drain region of the MOS-FET 10. Therefore, the protection by the diode is performed, by designing the withstand voltage of the protection diode lower than the drain withstand voltage of the MOS-FET, at the time of impressing surge onto the drain terminal of the MOS-FET, accordingly the electrostatic breakdown of the drain terminal is pevented. |
