| 摘要 |
PURPOSE:To enhance accuracy by reducing damages of the surface of a substrate by a method wherein an impurity is diffused from above an Si film onto a semiconductor substrate after providing an oxide film which isolates impurity diffused regions. CONSTITUTION:An insulation oxide film 4 is formed in a semiconductor substrate 20 after an N type buried layer 2 and an N type semiconductor layer collector region 3 are formed on the surface of a P type Si substrate 1. Next, a poly Si film 21, an Si oxide film 22, and an Si nitride film 23 are successively formed on the substrate 20. Then, oxide films 25 and 26 are formed after forming a base region 6. An Si nitride film 33 is formed again after the films 23 and 22 are removed. The thermal diffusion of phosphorus is performed through the poly Si film 21 after boring a window, resulting in the formation of an N type collector contact region 7 of high concentration. A base region 61 is formed again by the same method. Finally, a platinum silicide electrode wiring 28 is formed. |
