| 摘要 |
PURPOSE:To measure simultaneously the resistivity of a semiconductor and the contact resistance between a metal and the semiconductor by measuring an input resistance through the change of dimension of external electrode of a Kolbino type electrode measuring element forming internal and external electrodes on the semiconductor layer. CONSTITUTION:The dimension of the external electrode 3 of Kolbino type electrode measuring element forming the internal and external electrodes 1, 3 in radius of (a), (b) (b>=a) on the semiconductor layer 2 is changed. A plurality of patterns are formed and an input resistance R1 is measured. When a sheet resistance of semiconductor 2 is f=ln(x/a), rs, a theoretical equation based on 2piRf=rsq+rsf is shown in the diagram where (f) is plotted on the X axis, while 2piRf on the Y axis. Moreover, the resistivity and the intrinsic contact resistance are calculated from the inersecting points of diagram on the X and Y axes. |
