| 发明名称 |
Method for treatment of metal substrate for growth of hydrogen-containing semiconductor film |
| 摘要 |
In the deposition of a hydrogen-containing semiconductor film on a metal substrate, the electric contact characteristic between the metal substrate and the semiconductor film is improved by preparatorily exposing to hydrogen plasma the surface of the metal substrate on which the semiconductor film is to be deposited.
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| 申请公布号 |
US4436761(A) |
申请公布日期 |
1984.03.13 |
| 申请号 |
US19820401813 |
申请日期 |
1982.07.26 |
| 申请人 |
AGENCY OF INDUSTRIAL SCIENCE & TECHNOLOGY;MINISTRY OF INTERNATIONAL TRADE & INDUSTRY |
发明人 |
HAYASHI, YUTAKA;YAMANAKA, MITSUYUKI;KARASAWA, HIDEYUKI |
| 分类号 |
H01L31/0248;C23C16/02;H01L21/20;H01L21/205;H01L21/302;H01L31/0224;H01L31/04;H01L31/20;(IPC1-7):B05D3/06 |
主分类号 |
H01L31/0248 |
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