Method for fabricating solid-state image sensor

摘要

In the fabrication of a solid-state image sensor of the type having a plurality of photoelectric transducer means on a semiconductor substrate of one conductivity, excessive charge drain regions each provided with a plurality of first electrodes and second electrodes which function as a gate for controlling the drain of excessive charge, impurities or dopants of the other conductivity are introduced immediately below each of the regions at which the first electrodes are to be formed; thereafter, the first and second electrodes are formed; and impurities or dopants which are same as the above-described impurities or dopants are introduced while using the first and second electrodes as a masking pattern, whereby the photoelectric transducer means and drain regions are formed.