MANUFACTURE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE:To prevent a cavity formed on a substrate from being deformed by thermal treatment for an epitaxial growth by a method wherein the cavity is formed on the substrate by chemical etching and a surface layer is removed by dry etching and then semiconducltor layers are formed on the substrate by an epitaxial growth. CONSTITUTION:On an n type InP substrate an n type InP buffer layer 2 and a p type InP current blocking layer 3 are formed by an epitaxial growth and SiO2 film 4 is formed. Then an aperture of stripe-form is formed on the film 4. A V-groove 6 is formed by chemical etching. Then the film 4 is removed selectively by HF and products of the chemical etchin gare removed by dry etching. After that an n type InP cladding layer 7, a non-doped InGaAsP activated layer 8, a p type InP cladding layer 9 and a p type InGaAsP contact layer 10 are successively formed in the V-groove 6 by a liquid phase epitaxial growth.