| 摘要 |
PURPOSE:To obtain a high density and high efficiency IC by a method wherein a conductive film, with which a fixed potential can be applied, is interposed in the insulating film provided on a semiconductor substrate, and a connection pad is provided on the upper surface of said conductive film, thereby enabling to reduce noise and to obtain the structure with which the electrical characteristics of the semiconductor device can be stabilized. CONSTITUTION:An aluminum conductive film 20 is formed in the intermediate position of an SiO2 film 13, and a fixed potential is given to it. Ov means an earthing, and a fixed potential is considered as an earthing level in the ordinary circumstances. Accordingly, the influence between the signal S1 to be applied to a bonding pad 15 and the signal S2 to be applied to the wiring layer 17 located on the semiconductor 11, is blocked by an aluminum conductive film 20, thereby enabling to remove the noise of the signal S1 for the wiring layer 17 and also to remove the generation of an erroneous operation. The above-mentioned aluminum conductive film 20 is coated on the whole surface of the IC chip in such a manner that it does not come in contact with the connection hole (through hole) 18 located between the upper and lower parts connected to the bonding pad. |
