发明名称 SEMICONDUCTOR PRESSURE DETECTOR
摘要 PURPOSE:To achieve an excellent linear relationship between pressure and output even in a low pressure measured value by arranging an Si distortion causing beam to provide other areas with a proper rigidity so as to concentrate stress on a area where a gage resistance is formed. CONSTITUTION:A measuring diaphragm 10 comprising a monocrystal Si is mounted in a housing 16 through hollow support members 12 and 14. The support member 12 uses a silicate glass or the like close to in thermal expansion modulus Si with due consideration given to electric insulation from the housing 16 of the measuring diaphragm 10 and thermal distortion due to difference in the thermal expansion modulus from the housing 16. The support member 14 uses a Fe-Ni alloy or the like close in the thermal expansion coefficient to Si. Measuring diaphragm 10 thus obtained are joined together between the support members 12 and 14 by the electrode joining method or the like. Electric outputs from the measuring diaphragms 10 are taken out through a lead 18 and a terminal 20.
申请公布号 JPS5943326(A) 申请公布日期 1984.03.10
申请号 JP19820152610 申请日期 1982.09.03
申请人 HITACHI SEISAKUSHO KK 发明人 SHIMAZOE MICHITAKA;MATSUOKA YOSHITAKA
分类号 G01L9/04;G01L9/00 主分类号 G01L9/04
代理机构 代理人
主权项
地址