| 摘要 |
PURPOSE:To form an isolation region in width as narrow as possible by allowing a polycrystalline semiconductor film to remain only on the side surface of a projected partition wall, then growing a semiconductor epitaxial layer on a semiconductor substrate, and burying the wall. CONSTITUTION:SiH4 gas is thermally decomposed by a CVD method, and a polycrystalline silicon film 14 having a thickness of 1,000Angstrom is entirely coated. Then, a polycrystalline silicon film 14 is etched by reactive ion etching using CF4 gas on the upper surface. The film 14 is vertically etched, and the film 14 having a thickness of approx. 1,000Angstrom is allowed to remain only on the side surface of a projected partition wall made of an SiO2 film 12. Then, SiH4 is decomposed at high temperature by a CVD method to epitaxially grow a single crystal silicon layer 15. An element is, thereafter, formed on the layer 15 which is isolated in an isolation region made of the film 12. |
