| 摘要 |
PURPOSE:To obtain the fine pattern using the thin thickness of a thin layer consisting of a growth layer as stripe width by growing the thin layer composed of another semiconductor crystal different from a projected section in an epitaxial manner and removing only the projecting section through selective etching. CONSTITUTION:A projecting section 3 is formed to the surface of a semiconductor crystalline substrate 1 by using a mask 2 consisting of a proper dielectric, a crystal face vertical to the surface of the substrate 1 appears in a side surface 4, and a suitable clerance is also formed between the projecting section 3 and the surface of the substrate in a trough section and the surface of the substrate is coated with a mask 5. The semiconductor crystal different from a substrate crystal is grown in an epitaxial manner, crystalline orientations are selected so that a lateral growth rate in the side surface 4 is increased extremely by utilizing a difference due to the face orientations of a growth rate, and the epitaxial growth layer 6 of the thin layer is obtained. The masks 2 and 5 are removed, and the projecting section 3 is removed by using a selective etchent, an etching rate thereof differs largely. A control at nanometer orders is enabled sufficiently through atomic-molecular deposition technique at an Angstrom unit in the thickness direction, such as MBE, MO-CVD, etc. regarding the thickness of the thin layer 6. |
