THIN ZINC SELENIDE FILM AND ITS FORMATION

摘要

PURPOSE:To easily form a thin zinc selenide film without using a vacuum vessel by forming a layer consisting of a mixture composed of an org. zinc compd. having a zinc-selenium bond and specific dopant on a substrate and subjecting the layer to thermal cracking in an oxidizing atmosphere. CONSTITUTION:The dopant which is an org. metallic compd. such as manganese octyl selenide having >=1 bonds with selenium is mixed with the org. zinc compd. such as zinc lauryl selenide having at least one zinc-selenium bond in the inside. Such mixture is dissolved in a solvent and is coated on the substrate consisting of alumina, etc.. After the coating is dried to evaporate the solvent, the coating is thermally cracked in an oxidizing atmosphere such as the atmospheric air to form the thin film of zinc selenide. The thin film is further calcined in an inert atmosphere as necessary. The thin film having a large area is easily produced by the above-mentioned method.