Bipolar transistor, in particular for high-power applications

摘要

The invention relates to a bipolar transistor which is applied, in particular, in the high-power field, which comprises, situated in or on a collector body of the first conduction type, of the second conduction type and a base layer which contains an emitter layer of the second conduction type situated in the base layer and composed of one or more parts. The special feature of the novel bipolar transistor is that the emitter layer is provided with a continuous, pinched-off resistor which is formed near its periphery and encompasses the interior of the emitter. The pinched-off resistor around the interior of the emitter may have a uniform width; however, it may also be situated in a trench formed and etched in the emitter layer at the periphery of the emitter or under a projecting oxide layer grown in situ in the metal layer at the periphery. <IMAGE>