| 摘要 |
PURPOSE:To execute the formation of a high-concentration layer, the formation of an ohmic electrode and relative positioning by a simple process by forming a hole in which the opening section of a first layer is than that of a second layer, etching the compound semiconductor while using the thin-film of the first layer as a mask and vapor-growing an element. CONSTITUTION:An electrode pattern is formed by a photo-resist 14, a nitride film 13 and an oxide film 12 are etched through dry etching using CF4 gas while using the pattern as a mask, and the hole in which the opening section of the oxide film 12 of the first layer is wider than that of the nitride film of the second layer on the oxide film is formed. Gallium arsenide 11 is etched by using a mixed liquid of sulfuric acid, hydrogen peroxide and water while using the oxide film 12 as a mask and entered in a thermal decomposition system growth oven employing arsine-organic gallium-hydrogen, and a gallium aresenide crystal 15 in high concentration is grown selectively. When metals 16, 17 forming the ohmic contact are evaporated while using the nitride film 13 as a mask, step broken sections 18, 18' can be formed, the metals are alloyed through heat treatment, and the excellent ohmic contact is obtained. |
