| 摘要 |
PURPOSE:To eliminate the effect of a stepped difference by forming a resist pattern by using a mask, in which a plurality of narrow dummy patterns are formed in parallel adjacent to the position of a lower layer pattern, and forming the resist pattern to a tapered shape through dry etching when forming the lower layer pattern. CONSTITUTION:Narrow dummy mask patterns 14 are formed adjacent to the position 13 required for relaxing the stepped difference of one part of a mask pattern 12 forming a conductor pattern consisting of an Al.Cu alloy. A positive type photo-resist 17 is formed on an Al.Cu alloy thin-film 16, light goes round under the state after the photo-resist is exposed by using said mask and developed because the dummy mask patterns 14 are formed narrowly in a latticed shape, and the photo-resist 17 under the position of the pattern is also photo- sensitized and undulations 18 are formed. An Al.Cu alloy pattern to which a taper 19 is formed is obtained through dry etching after a section not coated with the photo-resist 17 is removed through etching because of different etching rates, and the residual photo-resist 17 is removed by a solvent. |
