发明名称 |
Heterojunction transistor and method of fabricating the same. |
摘要 |
<p>Semiconductor device having a hetero junction in which a polycrystalline or amorphous silicon layer (7) doped with oxygen is formed over a monocrystalline silicon semiconductor substrate (1) as a passivation film, and impurities are doped only into the desired portions of the layer (7), thereby forming a semiconductor layer having a desired conductivity type. The photoetching step which is heretofore required can be omitted by forming the oxygen-doped polycrystalline or amorphous silicon layer (7) and then doping impurities having the desired conductive type.</p> |
申请公布号 |
EP0101739(A1) |
申请公布日期 |
1984.03.07 |
申请号 |
EP19830900660 |
申请日期 |
1983.02.18 |
申请人 |
HITACHI, LTD. |
发明人 |
TANAKA, TOMOYUKI;YAMADA, KOICHIRO;YASUDA, YASUMICHI |
分类号 |
H01L21/314;H01L21/3215;H01L21/331;H01L29/04;H01L29/08 |
主分类号 |
H01L21/314 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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