| 摘要 |
PURPOSE:To obtain the titled body having a very small dark decay of the electrostatic potential by providing an intermediate layer between the electroconductive substrate and the photoconductive layer composed of a non- crystalline silicon, and by incorporating a dry cured material of a solution contg. an org. aluminum compd. to the intermediate layer. CONSTITUTION:The photoconductive layer is composed of a semiconductor having the non-crystalline silicon contg. hydrogen atom, as a main component. The intermediate layer is composed of the dry cured material of the solution contg. at least one kind of the org. aluminum compd. As the used org. aluminum compd, aluminum trisacetylacetonate, etc., is examplified. The solution of the org. aluminum compd, optionally, adding the org. silicon comd, is coated on the photoconductive layer by means of a various kinds of the coating method such as a spray coating, a dipping coating, a knife coating or a roll coating, followed by drying and curing it. The dry curing temp. of said compd. is 100-400 deg.C. The thickness of the film of the surface layer is preferable to be <=1mum. |
