Semiconductor device with a multilayer structure.

摘要

A semiconductor device has a substrate (1, 2) provided with a mesa region (11), wherein an insulation film (6) is provided in regions other than the mesa region (11), and a polycrystalline silicon layer (10-1) and a metal silicide layer (10-2) are formed over said insulation film (6), this multilayer structure consisting of a take-out portion for at least one of the emitter (4-1), base (4-3), and collector (4-2) members of a bipolar transistor provided in the mesa region (11).