| 摘要 |
PURPOSE:To enable high S/N ratio recording in a wide range of power of light for writing without any deformation, by forming a high m.p. protective film having an m.p. higher than a recording temp. and suppressing the deformation of the recording layer of a recording medium for recording by heating. CONSTITUTION:The 40nm thick recording layer 2 made of Sb2Se3 is formed on a light transmitting substrate 1 made of polymethyl methacrylate by vapor deposition or the like, a 40nm thick reflective layer 3 made of Bi2Te3 is vapor deposited on this layer 2, and further on this layer 3 a 15nm thick protective layer 7 is formed by vapor deposition or the like, and it is made of metal or alloy having an m.p. higher by >=100 deg.C than that of the layer 3, e.g., 585 deg.C of the m.p. of Bi2Te3, such as In2Te3, Mn, Ni, Cr, Ni-Cr-Mn-Cr, Mn-Cu, Ni, to suppress mechanical deformation of the layers 2, 3. As the protective film 7, besides said films, a high m.p. resin film can be used, and in that case, a dye having high absorbance of writing and reading I. R. light is mixed. |
