| 摘要 |
PURPOSE:To obtain a slender gate electrode by a method wherein a source and drain regions which sandwich the gate region are formed in a semi-insulation GaAs substrate, an SiO2 film adhered thereon is changed columnar and then surrounded by resin, and the gate electrode is buried into the hole generated by drawing off the SiO2 film at the time of providing the gate electrode on the gate region. CONSTITUTION:Si ions are implanted into a semi-insulation GaAs substrate 1 and heat-treated, resulting in the formation of an N type gate region 4, and an SiN protection film 8, SiO2 film 12 and a polycrystalline Si film 11 are laminated and adhered over the entire surface. Next, the lower layer 12 is side-etched in opposition to the upper layer 11 with a photo resist pattern 10 as the mask, the Si ions of high density are implanted and heat-treated, resulting in the formation of the P type source and drain regions 2 and 3 on both sides of the resion 4. Thereafter, the pattern 10 and the upper layer 11 are removed, the polymer resin 16 is coated over the entire surface, thus filling the lower layer 12 which remains, the lower layer 12 is drawn off, the exposed film 8 is removed, and then the gate electrode 7 is buried therein. Then, the resin 16 becoming unnecessary is removed. |
