SEMICONDUCTOR IC CIRCUIT AND LASER PROCESSING THEREOF

摘要

PURPOSE:To perform the laser processing with high quality by a method wherein the reflectance of laser beam is measured by providing a reflectance measuring part constituted similarly to the wiring part irradiated with laser beam to calculate the laser power absorbed into the wiring part in terms of the reflectance being measured. CONSTITUTION:A memory cell 12 is formed on an Si substrate 11 and the bonding pads 13 are formed around the periphery of chip. Besides a selective circuit 14 is provided to transfer to a spare memory in case a defect is found in the cell 12. A reflectance measuring part 15 is formed on a part near the circuit 14. The sectional construction of the measuring part 15 is formed similarly to that of the wiring connection. The reflectance is measured by means of irradiating the measuring part 15 with the laser beam similar to that utilized for cutting and connecting with considerably low energy. Next, the laser power absorbed into the wiring part is calculated by the reflecting power making the laser power always constant to adjust the irradiated laser output for laser processing. Through these procedures, the laser processing for semiconductor IC may be performed with high quality and yield.