发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To produce a semiconductor device with high reliability at low cost by a method wherein a semiconductor body excluding its main surface is buried in a hole of substrate with insulating material to heap the laminating layers whereon electrolytic copper foil is stuck on a polyimide film connecting to semiconductor pellet through the opening of the substrate. CONSTITUTION:A band-like sheet 9 with adhesive layer 8 is stuck on a substrate 7 with a hole 6 arrayed and finished very precisely then an Si pellet 10 is inserted into the hole 6 and a polyimide resin 11 is buried in the gap between them and the surface of the substrate 7 is flattened and after hardening the whole body, the sheet 9 is peeled off. Another hole 14 is opened in a polyimide film 12 corresponding to the electrode of the pellet 10 and a laminating layer coated with an external lead 13 made of electrolytic copper foil is provided corresponding to the hole 14. Firstly the film 12 is stuck on the substrate 7 to be connected 15 collectively at one time by means of plating process. Secondly the whole body is covered with the polyimide resin films 16, 17 print-forming a solder electrode 18. Finally the process is finished by means of dicing. In such a constitution, the pellet of normal Al electrode may be finished into wireless flip chip structure at low cost producing a semiconductor device with high reliability.
申请公布号 JPS5940539(A) 申请公布日期 1984.03.06
申请号 JP19820149275 申请日期 1982.08.30
申请人 HITACHI IRUMA DENSHI KK 发明人 ABE TOORU;TAKAGI TAKESHI;IIDA SATOSHI
分类号 H01L21/60 主分类号 H01L21/60
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