| 摘要 |
<p>PHN 9779 21 A method of providing in a self-registering manner underpasses in a semiconductor device having insulated gate field effect transistor, in which the underpasses below the field oxide connect together electrode zones of the field effect transistors. The field oxide is obtained by local oxidation by means of an oxidation mask. After a first oxidation treatment a part of the oxidation mask is removed and the semiconductor body is doped locally with As or Sb atoms for the underpasses. The apertures in the doping mark coincides substantially with the part of the oxidation mask to be removed, without critical alignment being necessary therefor, in that the masking effect of the already obtained oxide is used. After the doping treatment a second oxidation treatment is carried out to complete the field oxide.</p> |
