| 摘要 |
PURPOSE:To facilitate the uniform operation of a number of transistor cells as well as to increase their output power by a method wherein a high resistance region is partially provided in a gate region, and the resistance between a gate electrode and a gate channel boundary is properly increased. CONSTITUTION:Gates 2, which are P type region, are formed in the vicinity of the surface of a semiconductor substrate 1 consisting of an N type high density substrate 1a, to be turned to a drain region, and an N type epitaxial layer 1b, and a source 3 which is an N type high density region is formed between the gates 2. A selective oxide film 4 is formed in the vicinity of the surface of the substrate 1 located between the gate 2 and the source 3, and electrodes 5 and 6 are formed on the gate 2 and the source 3 respectively. Said gate 2 consists of the first region 2a having high density on the outermost circumference, the second region 2b of low density and the third region 2c of high density to be used to lower the contact resistance with a gate metal electrode 5. |
